Features:
- VCES: 1400V, 1600V and 1700V
- Ic(25): 5.7A-70A
- Non-Epitaxial construction and new fabrication process
- combined strengths of MOSFET & IGBT
- Fast and equally rated Body Diode
- Positive Temp Coefficient of IGBT and Diode facilitates paralleling.
- Low Vce(sat) and very fast swiching varieties.
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