| MII 二單元IGBTs模塊 |
| ◆ MDI IGBT |
|
Features:
- Vces: 600V and 1200V. Ic(25): 25A - 670A
- NPT or NPT³ IGBT with low Vce(sat),low switching losses, square RBSOA, short circuit ruggedness, positive temperature coefficient for easy parallelling, short tail current
- Hiperfast diodes with soft recovery
- Package with insulated copper base plate(2500V rms)and pins for PCB mounting. U/L registered.
|
|
|
|
PartNumber
|
Vces
(V)
|
IC25
Tc=25°C
IGBT
(A)
|
IC80
Tc=80°C
IGBT
(A)
|
VCE(sat)
typ
Tj=25°C
IGBT
(V)
|
Eoff
typ
Tj=125°C
IGBT
(mJ)
|
RthJC
max
IGBT
(K/W)
|
IF25
Tc=25°C
Diode
(A)
|
IF80
Tc=80°C
Diode
(A)
|
RthJC
max
Diode
(K/W)
|
PackageStyle
|
|
MDI75-12A3
|
1200
|
90
|
60
|
2.2
|
5.6
|
0.33
|
100
|
60
|
0.66
|
Y4-M5
|
|
MDI100-12A3
|
1200
|
135
|
90
|
2.2
|
10.5
|
0.22
|
150
|
100
|
0.45
|
Y4-M5
|
|
MDI145-12A3
|
1200
|
160
|
110
|
2.2
|
15
|
0.18
|
150
|
100
|
0.33
|
Y4-M5
|
|
MDI150-12A4
|
1200
|
180
|
120
|
2.2
|
11.5
|
0.17
|
200
|
130
|
0.23
|
Y3-DCB
|
|
MDI200-12A4
|
1200
|
270
|
180
|
2.2
|
21
|
0.11
|
300
|
200
|
0.15
|
Y3-DCB
|
|
MDI300-12A4
|
1200
|
330
|
220
|
2.2
|
29
|
0.09
|
450
|
270
|
0.15
|
Y3-DCB
|
|
MDI400-12E4
|
1200
|
425
|
300
|
2.2
|
30
|
0.08
|
450
|
290
|
0.15
|
Y3-Li
|
|
MDI550-12A4
|
1200
|
670
|
460
|
2.3
|
59
|
0.05
|
750
|
460
|
0.05
|
Y3-DCB
|
|
| ◆ MID IGBT |
|
Features:
- Vces: 600V and 1200V. Ic(25): 25A - 670A
- NPT or NPT³ IGBT with low Vce(sat),low switching losses, square RBSOA, short circuit ruggedness, positive temperature coefficient for easy parallelling, short tail current
- Hiperfast diodes with soft recovery
- Package with insulated copper base plate(2500V rms)and pins for PCB mounting. U/L registered.
|
|
|
|
PartNumber
|
Vces
(V)
|
IC25
Tc=25°C
IGBT
(A)
|
IC80
Tc=80°C
IGBT
(A)
|
VCE(sat)
typ
Tj=25°C
IGBT
(V)
|
Eoff
typ
Tj=125°C
IGBT
(mJ)
|
RthJC
max
IGBT
(K/W)
|
IF25
Tc=25°C
Diode
(A)
|
IF80
Tc=80°C
Diode
(A)
|
RthJC
max
Diode
(K/W)
|
PackageStyle
|
|
MID75-12A3
|
1200
|
90
|
60
|
2.2
|
5.6
|
0.33
|
100
|
60
|
0.66
|
Y4-M5
|
|
MID100-12A3
|
1200
|
135
|
90
|
2.2
|
10.5
|
0.22
|
150
|
100
|
0.45
|
Y4-M5
|
|
MID145-12A3
|
1200
|
160
|
110
|
2.2
|
15
|
0.18
|
150
|
100
|
0.45
|
Y4-M5
|
|
MID150-12A4
|
1200
|
180
|
120
|
2.2
|
11.5
|
0.17
|
200
|
130
|
0.33
|
Y3-DCB
|
|
MID200-12A4
|
1200
|
270
|
180
|
2.2
|
21
|
0.11
|
300
|
200
|
0.23
|
Y3-DCB
|
|
MID300-12A4
|
1200
|
330
|
220
|
2.2
|
29
|
0.09
|
450
|
270
|
0.15
|
Y3-DCB
|
|
MID400-12E4
|
1200
|
425
|
300
|
2.2
|
30
|
0.08
|
450
|
290
|
0.15
|
Y3-Li
|
|
MID550-12A4
|
1200
|
670
|
460
|
2.3
|
59
|
0.05
|
750
|
460
|
0.05
|
Y3-DCB
|
|
| ◆ MII IGBT |
|
Features:
- Vces: 600V and 1200V. Ic(25): 25A - 420A
- NPT or NPT³ IGBT with low Vce(sat),low switching losses, square RBSOA, short circuit ruggedness, positive temperature coefficient for easy parallelling, short tail current
- Hiperfast diodes with soft recovery
- Package with insulated copper base plate(2500V rms)and pins for PCB mounting. U/L registered.
|
|
|
|
PartNumber
|
Vces
(V)
|
IC25
Tc=25°C
IGBT
(A)
|
IC80
Tc=80°C
IGBT
(A)
|
VCE(sat)
typ
Tj=25°C
IGBT
(V)
|
Eoff
typ
Tj=125°C
IGBT
(mJ)
|
RthJC
max
IGBT
(K/W)
|
IF25
Tc=25°C
Diode
(A)
|
IF80
Tc=80°C
Diode
(A)
|
RthJC
max
Diode
(K/W)
|
Configuration
|
PackageStyle
|
|
MII75-12A3
|
1200
|
90
|
60
|
2.2
|
5.6
|
0.33
|
100
|
60
|
0.66
|
Phase Leg
|
Y4-M5
|
|
MII100-12A3
|
1200
|
135
|
90
|
2.2
|
10.5
|
0.22
|
150
|
100
|
0.45
|
Phase Leg
|
Y4-M5
|
|
MII145-12A3
|
1200
|
160
|
110
|
2.2
|
15
|
0.18
|
150
|
100
|
0.45
|
Phase Leg
|
Y4-M5
|
|
MII150-12A4
|
1200
|
180
|
120
|
2.2
|
11.5
|
0.17
|
200
|
130
|
0.33
|
Phase Leg
|
Y3-DCB
|
|
MII200-12A4
|
1200
|
270
|
180
|
2.2
|
21
|
0.11
|
300
|
200
|
0.23
|
Phase Leg
|
Y3-DCB
|
|
MII300-12E4
|
1200
|
280
|
200
|
2.2
|
20
|
0.11
|
300
|
190
|
0.23
|
Phase Leg
|
Y3-Li
|
|
MII300-12A4
|
1200
|
330
|
220
|
2.2
|
29
|
0.09
|
450
|
270
|
0.15
|
Phase Leg
|
Y3-DCB
|
|
MII400-12E4
|
1200
|
420
|
300
|
2.2
|
30
|
0.08
|
450
|
290
|
0.15
|
Phase Leg
|
Y3-Li
|
|
|
